Active matrix substrate, method of manufacturing same, and flat-panel image sensor

ABSTRACT

In an active matrix substrate, a glass substrate is provided with TFTs having gate electrodes connected to scanning lines also provided on the glass substrate. The glass substrate is further provided with auxiliary capacitance lines, formed on the same layer as the scanning lines. Further, pixel electrodes connected to drain electrodes of the TFTs are formed on the same layer as signal lines connected to source electrodes of the TFTs. An insulating layer is provided between the layer forming the signal lines and pixel electrodes and the layer forming the drain and source electrodes. Since the insulating film is present between the signal lines and the scanning and auxiliary capacitance lines, influence on the auxiliary capacitance value can be reduced, as can a signal line capacitance value. As a result, even when the auxiliary capacitance value is increased, the signal line capacitance value remains small.

FIELD OF THE INVENTION

The present invention relates to an image display device such as aliquid crystal display device, to an image capture device such as aflat-panel image sensor, and to an active matrix substrate used in theforegoing devices and a method of manufacturing such an active matrixsubstrate.

BACKGROUND OF THE INVENTION

Making the most of their superior characteristics including having alarge surface area, and being thin and light weight, active matrixsubstrates can be used not only in image display devices such as liquidcrystal display devices, but also in image capture devices such asflat-panel X-ray image sensors.

The following will explain the structure of a conventional active matrixsubstrate with reference to FIGS. 6 through 8. FIG. 6 is a plan view ofa conventional active matrix substrate, showing one of a plurality ofpixels provided in the active matrix substrate. Such an active matrixsubstrate is used to improve aperture ratio in the liquid crystaldisplay devices such as those disclosed in Japanese Unexamined PatentPublication No. 58-172685/1983 (Tokukaisho 58-172685, published on Oct.11, 1983) and U.S. Pat. No. 5,953,084 (issued on Sep. 14, 1999), and isstructured as follows.

A plurality of scanning lines 52 and signal lines 56 are arranged in alattice form on a glass substrate 51 (see FIGS. 7 and 8), and aswitching element and a pixel electrode 57 are provided for each areawhere a scanning line 52 and a signal line 56 cross. Each of theswitching elements is a thin-film transistor (hereinafter referred to as“TFT”) 60, in which a gate electrode 55 is connected to the signal line52, a source electrode 61 is connected to the signal electrode 56, and adrain electrode 63 is connected to the pixel electrode 57 via a drainline 63 a and a contact hole 57 a. Further, below the contact hole 57 ais provided an auxiliary capacitance line 53.

FIGS. 7 and 8 are cross-sectional views of the foregoing conventionalactive matrix substrate, taken at lines D—D and E—E, respectively, ofFIG. 6. On the insulative glass substrate 51 are provided the scanningline 52 (see FIG. 6), the gate electrode 55, which is a branch line ofthe scanning line 52, and the auxiliary capacitance line 53. On thesurfaces of these elements oxidation films 52 a and 53 a (anodicoxidation (AO) films) are provided by anodic oxidation. Then a gateinsulating film 54 is provided on the oxidation films 52 a and 53 a onthe scanning line 52 and the auxiliary capacitance line 53, and on areasof the glass substrate 51 where the scanning line 52 and the auxiliarycapacitance line 53 are not provided.

Then, on areas of the gate insulating film 54 lying above the gateelectrode 55, a TFT 60, which is a switching element made up of asemiconductor domain 64 and a contact layer 65, is provided for eachpixel. The source electrode 61 of the TFT 60 is connected to the signalline 56, which is provided on the gate insulating film 54 extending in adirection perpendicular to a direction in which the scanning line 52extends. Further, the drain electrode 63 of the TFT 60 is connected tothe drain line 63 a provided on the gate insulating film 54.

Over the foregoing elements is provided a protective film 58 whichcovers the TFT 60 (including the source and drain electrodes 61 and 63),the signal line 56, the drain line 63 a, and the gate insulating film54. Then an inter-layer insulating film 59 and the pixel electrode 57are provided over the foregoing elements. The pixel electrode 57 iselectrically connected to the drain line 63 a via a contact hole 57 awhich penetrates the inter-layer insulating film 59 and the protectivelayer 58. Further, the drain line 63 a lies opposite the auxiliarycapacitance line 53, but separated therefrom by the gate insulating film54 and the oxidation film 53 a, thus forming an auxiliary capacitance62.

The following will explain a flat-panel X-ray image sensor and a liquidcrystal display device which use the foregoing active matrix substrate.

In a flat-panel X-ray image sensor, a device intended to replace X-rayphotograph devices which use conventional photosensitive photographicfilm, an image is formed based on a two-dimensional distribution ofX-ray quantities incident on a flat panel of the image sensor. Whenusing such a device, an X-ray source is provided separately, and anobject to be photographed is placed between the X-ray source and theimage sensor.

When an active matrix substrate is used in such a flat-panel X-ray imagesensor, as disclosed in Japanese Unexamined Patent Publication No.4-212458/1992 (Tokukaihei 4-212458, published on Aug. 4, 1992), aphotoelectric conversion layer, for converting X-rays to electricalcharges, is provided on the pixel electrodes 57, and the pixelelectrodes 57 are used as charge-collecting electrodes. Thephotoelectric conversion layer is made of a semiconductor element, andthis semiconductor element is provided by film formation directly on thepixel electrode 57, or by laminating thereon a semiconductor elementformed separately.

The foregoing flat-panel X-ray image sensor provided with an activematrix substrate operates as follows. A DC current is applied betweenthe pixel electrode 57 and a counter electrode provided above thephotoelectric conversion layer. The TFT 60 is OFF except when reading animage, and a charge produced in the photoelectric conversion layer byX-rays incident thereon is collected in the auxiliary capacitance 62 viathe pixel electrode 57. Reading of this charge is performed by selectingthe corresponding pixel using the scanning line 52, and allowing thecharge accumulated in the auxiliary capacitance 62 to flow to the signalline 56 via the TFT 60. Charges read out are amplified by a circuit,such as an operational amplifier, connected to the end of the signalline 56. Then an image is formed based on the distribution of chargequantities read out from all of the pixels.

When, on the other hand, the foregoing active matrix substrate is usedin a liquid crystal display device, a counter electrode is providedopposite the pixel electrodes 57, with a liquid crystal layertherebetween. Then, by applying a potential difference between a pixelelectrode 57 and the counter electrode, light passing through the liquidcrystal layer is subject to a rotation of its plane of polarizationcorresponding to the potential difference. The direction of the plane ofpolarization of the light determines a quantity of light passing througha polarizing plate provided externally, thus forming an image by theintensity of light in each pixel.

In the active matrix substrate in this case, in a pixel selected by thescanning line 56, a potential is written to the pixel electrode 57 fromthe signal line 56 via the TFT 60. This produces the foregoing voltagebetween the pixel electrode 57 and the counter electrode.

Electrostatic capacitance parasitic in the lines provided in the activematrix substrate greatly influences the performance of the active matrixsubstrate. This electrostatic capacitance not only causes delay intransmission of signals inputted to the ends of these lines and of datafrom the pixels, but also causes the potential of non-target pixels andlines to fluctuate, and makes the potential of target lines susceptibleto external influence. A further problem with this electrostaticcapacitance is that it impairs the quality of images captured ordisplayed by the device incorporating the active matrix substrate.

In a flat-panel X-ray image sensor, image data is formed on the basis ofcharges accumulated in the pixel electrodes 57, read out through thesignal lines 56. For this reason, electrostatic capacitance (signal linecapacitance) between the signal lines 56 and the scanning lines 56 andauxiliary capacitance lines 53 increases the time necessary to read outthe charges, and increases the noise component of the charges read out.As a result, quality of the captured image is impaired.

Particularly in a flat-panel X-ray image sensor, which forms an imagefrom weak X-rays, it is necessary to read charges of small quantityaccumulated in the pixel electrodes 57, and the influence of theforegoing electrostatic capacitance is especially serious.

However, in the conventional art, in which the signal lines 56 areprovided on the gate insulating film 54, structurally, the intervalbetween the signal lines 56 and the scanning lines 52 and that betweenthe signal lines 56 and the auxiliary capacitance lines 53 tend tobecome too small. This tends to increase the signal line capacitancevalue, which is likely to impair the quality of the captured image.

Further, in a flat-panel X-ray image sensor, since the pixel electrode57 is used for charge accumulation, the potential thereof tends tofluctuate more than in a liquid crystal or other display device. Inorder to prevent fluctuation in potential of the pixel electrode 57 fromcausing malfunction of the TFT 60, it is necessary to suppress thisfluctuation as much as possible. For this reason, the auxiliarycapacitance 62 connected to the pixel electrode 57 must have a muchgreater capacitance value than in a liquid crystal display device.However, since there are limits to how much the auxiliary capacitancevalue can be increased by increasing the width or surface area of theauxiliary capacitance lines 53, decreasing the thickness of the gateinsulating film 54 or the oxidation film 53 a is considered an effectivemeans of increasing the auxiliary capacitance value.

However, in the conventional structure, decreasing the thickness of thegate insulating film 54 or the oxidation film 53 a has the disadvantageof greatly increasing the signal line capacitance value, and thus thereare limits to how thin these members can be made. Thus, a drawback withthe conventional structure was that is was difficult to increase theauxiliary capacitance value.

Liquid crystal display devices, like flat-panel X-ray image sensors,also have the problem that in the conventional structure the signal linecapacitance value tends to become large. Liquid crystal display devicescan be expected to become even more high-definition in the future, butincreasing definition generally increases the capacitance value of eachline, and display quality suffers. Thus, further increase in definitionin the future calls for a new active matrix substrate structure capableof reducing signal line capacitance value, which greatly influencesdisplay quality.

Further, in order to obtain bright display in a liquid crystal displaydevice, it is especially important to increase aperture ratio. However,in an active matrix substrate with the conventional structure, theauxiliary capacitance lines 53, which block light, occupy a highproportion of the total surface area of the pixel, and thus contributeto reduced aperture ratio when used in a transmittive liquid crystaldisplay device. Further, it is possible to secure the necessaryauxiliary capacitance value while improving aperture ratio by decreasingthe width of the auxiliary capacitance lines 53 and decreasing thethickness of the gate insulating film 54 or the oxidation film 53 a,but, just as in the foregoing flat-panel X-ray image sensor, this tendsto increase the signal line capacitance value.

In response to this problem, the conventional art attempted to reducethe signal line capacitance value by, for example, forming a protectivefilm covering the semiconductor domain 64 of the TFT 60 and the glasssubstrate 51, and then forming on this protective film the sourceelectrode 61, the drain electrode 63, the signal line 56, the pixelelectrode 57, etc., as disclosed in Unexamined Japanese PatentPublication No. 60-160173/1985 (Tokukaisho 60-160173, published on Aug.21, 1985).

In such a structure, however, since contact between the source and drainelectrodes 61 and 63 on the one hand and the semiconductor domain 64 onthe other is likely to become unstable, the protective film cannot bemade too thick, and thus provides insufficient reduction of the signalline capacitance value. Further, the foregoing structure gives nothought to an auxiliary capacitance line 62, and if an auxiliarycapacitance line 62 is to be provided, the foregoing structure and theprocess for manufacturing it become complicated.

As discussed above, in order to reduce noise in a captured image andincrease reliability in a flat-panel X-ray image sensor, and to securedisplay quality and aperture ratio in a high-definition liquid crystaldisplay device, a structure for an active matrix substrate is called forwhich, first, enables reduction of the signal line capacitance value,and, second, prevents increase of the signal line capacitance value whenthe thickness of the gate insulating film 54 or the oxidation films 52 aand 53 a is decreased (when the auxiliary capacitance value isincreased).

SUMMARY OF THE INVENTION

It is an object of the present invention to provide an active matrixsubstrate having a small signal line capacitance value, and to providean active matrix substrate in which a signal line capacitance value isonly slightly increased by increasing an auxiliary capacitance value, inorder to realize an image capture device or image display device capableof obtaining a higher quality captured or displayed image.

In order to attain the foregoing object, an active matrix substrateaccording to the present invention is made up of switching elements,each switching between a source electrode and a drain electrode based ona signal supplied to a gate electrode; scanning lines connected to thegate electrodes; signal lines connected to the source electrodes; andpixel electrodes connected to the drain electrodes; in which a substrateis provided with a layer which forms the scanning lines; a layer,provided above the layer forming the scanning lines, which forms thesource electrodes; a layer, provided above the layer forming the sourceelectrodes, which forms the signal lines; and an insulating layer,provided between the layer forming the source electrodes and the layerforming the signal lines; and the scanning lines and the signal linesare provided on opposite sides of the insulating layer from each other.

In the foregoing structure, the substrate is provided with a layer whichforms the scanning lines; a layer, provided above the layer forming thescanning lines, which forms the source electrodes; and a layer, providedabove the layer forming the source electrodes, which forms the signallines. Further, an insulating layer is provided between the layerforming the source electrodes and the layer forming the signal lines. Inaddition, the scanning lines and the signal lines are provided onopposite sides of the insulating layer from each other, extending, forexample, in intersecting directions.

The conventional active matrix substrate was structured such that thesignal lines and scanning lines were provided on opposite sides of agate insulating film (which was provided on the scanning lines and thegate electrode). In this structure, the thickness of the gate insulatingfilm was determined in accordance with the specifications of theswitching element, and since the electrostatic capacitance value of thegate insulating film is based on the thickness of this film, it wasdifficult to set a smaller value. For this reason, in areas where asignal line and a scanning line are opposite one another on oppositesides of the gate insulating film, the capacitance value of a signalline capacitance (parasitic capacitance) arising between the signal lineand the scanning line increases, thus giving rise to the problemdiscussed above.

In the structure of the present invention outlined above, however, thesignal lines and scanning lines are separated by the insulating layer,which is provided between the layer forming the source electrodes andthe layer forming the signal lines. Consequently, the interval betweenthe signal lines and scanning lines separated by the insulating layercan be set to a greater value than the thickness of the gate insulatingfilm in the conventional structure. Thus the capacitance value of thesignal line capacitance arising between the signal lines and thescanning lines can be reduced in comparison with the foregoingconventional structure.

Since the foregoing insulating layer is provided between the layerforming the source electrodes and the layer forming the signal lines, itis independent of the specifications of the switching elements, unlike agate insulating film. Accordingly, the insulating layer can be formed insuch a way that the signal line capacitance value is sufficientlyreduced.

Specifically, the signal line capacitance value can be sufficientlyreduced by forming the insulating layer with a sufficient thickness, andusing a material having a small relative dielectric constant.

Further, some conventional active matrix substrates were structured soas to provide an insulator such as a protective film between thesemiconductor domain of the switching element and the source electrode.In this case, since, as discussed above, contact between the sourceelectrode and the semiconductor domain tends to become unstable, it isdifficult to make the insulator sufficiently thick, and thus difficultto reduce the signal line capacitance value.

In the structure of the present invention outlined above, however, sincethe layer forming the source electrodes and the layer forming the signallines are provided separately, it becomes possible to form the sourceelectrodes in close contact with the main body of each switching element(e.g., the semiconductor domain). Accordingly, the thickness of theinsulating layer can be increased sufficiently without adverselyaffecting the functioning of the switching element.

In addition, the source electrode and the signal line can be connectedby, for example, a contact hole formed in the insulating layer. Further,since a domain large enough to allow formation of this connection areacan be secured away from the switching element, connection will notbecome unstable.

Accordingly, the foregoing structure makes it possible to provide anactive matrix substrate with good switching element functioning, and inwhich a signal line capacitance arising between the signal lines and thescanning lines has a small capacitance value.

Further, the present invention discloses a method of manufacturing anactive matrix substrate in which pixel electrodes are made from the samelayer as that of signal lines, and the method includes the step offorming the pixel electrode and the signal line by patterning of asingle layer.

In the foregoing method, the signal lines and pixel electrodes areformed by patterning of the same layer (film). In other words, bypatterning of a single conductive film made of a single material, thesignal lines and the pixel electrodes can be formed in the same process.

Accordingly, the active matrix substrate according to the presentinvention can be manufactured by modifying part of the pattern of apattern mask used in forming the pixel electrodes in manufacturing aconventional active matrix substrate. Consequently, in manufacturing theactive matrix substrate according to the present invention, it ispossible to avoid complication of the manufacturing process, increase ofthe number of manufacturing steps, etc.

Further, by forming the source electrodes and drain electrodes bypatterning of the same layer (film), it is possible to further simplifythe manufacturing process.

In order to attain the foregoing object, an active matrix substrateaccording to the present invention includes signal lines connected toswitching elements, scanning lines attached to the switching elements,and a resin material provided between the signal lines and the scanninglines.

In this structure, the signal lines and scanning lines are provided inthe active matrix substrate on opposite sides of the resin material,extending, for example, in intersecting directions.

Resin materials generally have a lower relative dielectric constantthan, for example, inorganic materials. Accordingly, by providing thesignal lines and the scanning lines on opposite sides of a resinmaterial, the capacitance value of an electrostatic capacitance arisingbetween the signal lines and the scanning lines can be reduced. As aresult, the signal line capacitance value can be reduced.

Incidentally, in an active matrix substrate provided with auxiliarycapacitances, a resin material is preferably provided between theauxiliary capacitance lines forming the auxiliary capacitances and thesignal lines. In this way, the signal line capacitance value can befurther reduced.

In order to attain the foregoing object, another active matrix substrateaccording to the present invention is made up of switching elements,switching between a source electrode and a drain electrode based on asignal supplied to a gate electrode; scanning lines connected to thegate electrodes; signal lines connected to the source electrodes; andpixel electrodes connected to the drain electrodes; in which a substrateis provided with a layer which forms the signal lines; a layer, providedabove the layer forming the signal lines, which forms the gateelectrodes; a layer, provided above the layer forming the gateelectrodes, which forms the scanning lines; and an insulating layer,provided between the layer forming the gate electrodes and the layerforming the scanning lines; and the scanning lines and the signal linesare provided on opposite sides of the insulating layer from each other.

In the foregoing structure, the substrate is provided with a layer whichforms the signal lines; a layer, provided above the layer forming thesignal lines, which forms the gate electrodes; and a layer, providedabove the layer forming the gate electrodes, which forms the scanninglines. Further, an insulating layer is provided between the layerforming the gate electrodes and the layer forming the scanning lines. Inaddition, the scanning lines and the signal lines are provided onopposite sides of the insulating layer from each other, extending, forexample, in intersecting directions.

In this structure, as in the structure described above (in which a layerforming the scanning lines, a layer forming the source electrodes, and alayer forming the signal lines are provided on the substrate in thatorder), the scanning lines and the signal lines are provided on oppositesides of the insulating layer (which is provided between the layerforming the gate electrodes and the layer forming the scanning lines).Consequently, the capacitance value of the signal line capacitancearising between the scanning lines and the signal lines can be reduced.

In addition, the gate electrode and the scanning line can be connectedby, for example, a contact hole formed in the insulating layer. Further,since a domain sufficient to form this connection area can be securedaway from the switching element, connection will not become unstable.

Accordingly, this structure makes it possible to provide an activematrix substrate with good switching element functioning, and in which asignal line capacitance arising between the signal lines and thescanning lines has a small capacitance value.

In order to attain the foregoing object, a flat-panel image sensoraccording to the present invention is made up of the foregoing activematrix substrate provided with pixel electrodes, and a photoelectricconversion layer electrically connected to the pixel electrodes of theactive matrix substrate.

This structure provides a flat-panel image sensor in which pixelelectrodes function as charge-collecting electrodes. Further, thisstructure provides a flat-panel image sensor which includes theforegoing active matrix substrate having a small signal line capacitancevalue. Consequently, it is possible to suppress increase of the timeneeded to read the charges due to a large signal line capacitance, andto suppress superimposition of noise on the signal of the signal linedue to the influence of the scanning lines, auxiliary capacitance lines,pixel electrodes, etc.

Additional objects, features, and strengths of the present inventionwill be made clear by the description below. Further, the advantages ofthe present invention will be evident from the following explanation inreference to the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of an active matrix substrate according to a firstembodiment of the present invention.

FIG. 2 is a cross-sectional view taken at line A—A of FIG. 1.

FIG. 3 is a cross-sectional view taken at line B—B of FIG. 1.

FIG. 4 is a plan view of an active matrix substrate according to amodification of the first embodiment of the present invention.

FIG. 5 is a cross-sectional view taken at line C—C of FIG. 4.

FIG. 6 is a plan view of a conventional active matrix substrate.

FIG. 7 is a cross-sectional view taken at line D—D of FIG. 6.

FIG. 8 is a cross-sectional view taken at line E—E of FIG. 6.

FIG. 9 is a plan view of an active matrix substrate according to anothermodification of the first embodiment of the present invention.

FIG. 10 is a cross-sectional view taken at line F—F of FIG. 9.

FIG. 11 is a cross-sectional view taken at line G—G of FIG. 9.

FIG. 12 is a plan view of an active matrix substrate according to asecond embodiment of the present invention.

FIG. 13 is a cross-sectional view taken at line H—H of FIG. 12.

FIG. 14 is a cross-sectional view taken at line I—I of FIG. 12.

FIG. 15 is a plan view of an active matrix substrate according to athird embodiment of the present invention.

FIG. 16 is a cross-sectional view taken at line J—J of FIG. 15.

FIG. 17 is a cross-sectional view taken at line K—K of FIG. 15.

FIG. 18 is a cross-sectional view of a flat-panel X-ray image sensoraccording to a fourth embodiment of the present invention.

FIG. 19 is a cross-sectional view of a flat-panel X-ray image sensoraccording to a fifth embodiment of the present invention.

FIG. 20 is a cross-sectional view of a flat-panel X-ray image sensoraccording to a sixth embodiment of the present invention.

FIG. 21 is a plan view of an active matrix substrate according to aseventh embodiment of the present invention.

FIG. 22 is a cross-sectional view taken at line L—L of FIG. 21.

FIG. 23 is a cross-sectional view taken at line M—M of FIG. 21.

FIG. 24 is a cross-sectional view taken at line N—N of FIG. 21.

FIG. 25 is a plan view of an active matrix substrate according to aneighth embodiment of the present invention.

FIG. 26 is a cross-sectional view taken at line O—O of FIG. 25.

FIG. 27 is a cross-sectional view taken at line P—P of FIG. 25.

FIG. 28 is a cross-sectional view taken at line Q—Q of FIG. 25.

DESCRIPTION OF THE EMBODIMENTS First Embodiment

The following will explain one embodiment of the present invention withreference to FIGS. 1 through 5 and 9 through 11.

FIG. 1 is a plan view of an active matrix substrate according to thepresent embodiment, structured as follows. A plurality of scanning lines2 and signal lines 6 are arranged in a lattice form on a glass substrate1 (substrate) (see FIGS. 2 and 3), and a switching element and a pixelelectrode 7 are provided for each area where a scanning line 2 and asignal line 6 cross.

Each of the switching elements is a thin-film transistor (hereinafterreferred to as “TFT”) 10 having a gate electrode 5, a source electrode11, and a drain electrode 13. The gate electrode 5 is connected to thesignal line 2, the source electrode 11 is connected to the signalelectrode 6 via a source line 11 a and a contact hole 6 a, and the drainelectrode 13 is connected to the pixel electrode 7 via a drain line 13 aand a contact hole 7 a. Further, below the contact hole 7 a is providedan auxiliary capacitance line 3 (see FIG. 3), which forms an auxiliarycapacitance 12 with the drain line 13 a.

FIGS. 2 and 3 are cross-sectional views of the foregoing active matrixsubstrate, taken at lines A—A and B—B, respectively, of FIG. 1. On theinsulative glass substrate 1 are provided the gate electrode 5, thescanning line 2 (see FIG. 1), and the auxiliary capacitance line 3(these make up the first layer, i.e., the layer forming the gateelectrodes 5 and the scanning lines 2). On the surfaces of theseelements oxidation films 2 a and 3 a (anodic oxidation (AO) films;insulating films) are provided by anodic oxidation. Then a gateinsulating film 4 (first insulating film; second insulating film;insulating film) made of a film of a silicon-based compound such assilicon nitride (SiN_(x)) or silicon dioxide (SiO₂) is provided on thegate electrode 5, the scanning line 2 and the auxiliary capacitance line3, and on the areas of the glass substrate 1 not provided with thesemembers.

Incidentally, the oxidation film 2 a (first insulating film) is providedon the gate electrode 5 and the scanning line 2 (see FIG. 1), and theoxidation film 3 a (second insulating film) is provided on the auxiliarycapacitance line 3.

The gate electrode 5 is formed as a branch of the scanning line 2, andon that part of the gate insulating film 4 above the gate electrode 5, asemiconductor domain 14 (amorphous silicon channel layer; i layer;semiconductor layer) and a contact layer 15 (n-type silicon layer; n⁺layer) are provided. Further, on the contact layer 15 are provided thesource electrode 11 and the drain electrode 13 (second layer; layerforming source and drain electrodes 11 and 13). The foregoing members(gate electrode 5, gate insulating film 4, semiconductor domain 14,contact layer 15, source electrode 11, and drain electrode 13) make up aTFT 10 as a switching element, one of which is provided in each pixel.

The source electrode 11 of the TFT 10 extends down to the gateinsulating film 4, thus forming a source line 11 a. The source line 11 ais connected to the signal line 6 (to be discussed below). Further, thedrain electrode 13 also extends down to the gate insulating film 4,forming a drain line 13 a.

The drain line 13 a extends to a position above the auxiliarycapacitance line 3, and is also provided on the gate insulating film 4above the auxiliary capacitance line 3. Here, the auxiliary capacitanceline 3 and the drain line 13 a are in part provided opposite oneanother, on opposite sides of the oxidation film 3 a (dielectric layer)and the gate insulating film 4 (dielectric layer), thus forming anauxiliary capacitance 12 (electrostatic capacitance). Further, the drainline 13 a is connected to the pixel electrode 7 (to be discussed below).

A protective layer 8 (insulating layer) made of a silicon compound isprovided so as to cover all the foregoing members, and an inter-layerinsulating film 9 (insulating layer) is provided on the protective layer8. The signal line 6 and the pixel electrode 7 (third layer; layerforming the signal line 6 and pixel electrode 7) are provided on theinter-layer insulating film 9.

The signal line 6 is connected to the source line 11 a via a contacthole 6 a formed in the inter-layer insulating film 9 and the protectivelayer 8, thus allowing transmission of signals between the signal line 6and the source electrode 11. In the same way, the pixel electrode 7 isconnected to the drain line 13 a via a contact hole 7 a formed in theinter-layer insulating film 9 and the protective layer 8, thus allowingtransmission of signals between the drain electrode 13 and the pixelelectrode 7. Further, the pixel electrode 7 is also connected to theauxiliary capacitance 12 via the contact hole 7 a.

Since the contact holes 6 a and 7 a can be provided away from the TFT10, domains sufficient to form the connection areas can be secured, andconnection will not become unstable.

Next, a method of manufacturing the active matrix substrate according tothe present embodiment, structured as above, will be explained withreference to FIGS. 2 and 3.

First, a single-layer film of aluminum (Al), molybdenum (Mo), Tantalum(Ta), etc., or a multi-layer film of several of these, is formed bysputtering on the insulative glass substrate 1. Then, byphotolithography, this film is patterned into a predetermined shape toform the scanning lines 2 (see FIG. 1) and the gate electrodes 5 asbranches of the scanning lines 2, and the auxiliary capacitance lines 3.Then, by anodic oxidation of the entire surface of each of thesemembers, the oxidation films 2 a and 3 a (AO films) are formed. Here, bypatterning of a single film, both the scanning lines 2 and the auxiliarycapacitance lines 3 are formed as a plurality of lines parallel to andalternating with each other.

Next, plasma CVD is used to form the gate insulating film 4 of a siliconnitride (SiN_(x)) film, the semiconductor domain 14 of an amorphoussilicon film, and the contact layer 15 of an n-type silicon film, inthat order. The semiconductor domain 14 forms the channel of the TFT 10,and the contact layer 15 is a layer for providing electrical contactbetween the terminals of the semiconductor domain 14 and the sourceelectrode 11 and drain electrode 13, respectively. Then the foregoingamorphous silicon film and n-type silicon film are simultaneouslypatterned, thus forming a domain constituting the TFT 10.

Then the gate insulating film 4 is patterned to form signal inputterminals (not shown) for the scanning lines 2 and contact areas (notshown) for contact with main lines (not shown) which connect togetherthe auxiliary capacitance lines 3.

Next, a film of ITO (indium tin oxide), tantalum, or aluminum, etc. isdeposited by sputtering, and by patterning into a predetermined shape,the source electrode 11, source line 11 a, drain electrode 13, and drainline 13 a are formed. Here, the drain line 13 a is formed so as toextend to above the auxiliary capacitance line 3.

Next, by dry etching using the source electrode 11 and the drainelectrode 13 as resist, the n-type silicon film is separated into sourceand drain sides, thus completing the TFT 10 as a switching element.

Then, over the entire surface of the glass substrate 1 provided with theTFTs 10, a silicon nitride film is formed and patterned as theprotective film 8, after which the protective film 8 is removed at thecontact hole 6 a for electrically connecting the source line 11 a with asignal line 6 to be formed in an upper layer, the contact hole 7 a forelectrically connecting the pixel electrode 7 to the drain line 13 a,and at terminal areas (not shown) for connection to a driving circuit,readout circuit etc.

Incidentally, by forming the protective layer 8 of, for example, astable inorganic material such as the foregoing silicon nitride, the TFT10 is protected from damage with certainty.

Then the inter-layer insulating film 9 is formed on the protective layer8. In order to form the inter-layer insulating film 9, a resin havingphotosensitivity (photosensitive resin; resin material) is coated on,exposed, and developed, and then patterned into a predetermined shape.Then, as in the case of the protective film 8, the inter-layerinsulating film 9 is removed at the contact holes 6 a and 7 a, etc.

Incidentally, coating of the resin during formation of the inter-layerinsulating film 9 may be by means of a film formation method such asspin coating. With spin coating, it is easy to form a comparativelythick resin film of, say, around 1 μm to 5 μm. An inter-layer insulatingfilm 9 formed in this way can flatten out differences in surface heightwhere the TFT 10 and other members are formed.

Further, since it generally has a smaller relative dielectric constantthan inorganic materials, resin is preferable as a material for formingthe inter-layer insulating film 9. Acrylic resin, in particular, ispreferable because it has a relative dielectric constant ofapproximately 3, which is even lower than that of other resins likepolyimide.

Then the signal lines 6 and the pixel electrodes 7 are simultaneouslyformed on the inter-layer insulating film 9 by depositing a film of ITO,tantalum, or aluminum, etc. by sputtering and then by patterning thefilm into a predetermined shape.

Incidentally, in FIG. 1, the pixel electrode 7 is formed so as not tooverlap the TFT 10, but it may alternatively be positioned so as tooverlap the TFT 10.

In the foregoing manufacturing method, since the signal lines 6 and thepixel electrodes 7 are formed simultaneously by patterning of a singlelayer, both members can be realized merely by modifying a photomask usedconventionally. Accordingly, since there is no cost increase over theconventional method, cost increase can be suppressed.

Incidentally, the foregoing explained a case in which the signal lines 6and the pixel electrodes 7 are made from the same layer, but there is nolimitation to this; in order to reduce signal line capacitance(parasitic capacitance; electrostatic capacitance), it is sufficient ifthe signal lines 6 are provided on the inter-layer insulating film 9.The main reason to form the signal lines 6 and the pixel electrodes 7from the same layer is simplification of the manufacturing process.

Accordingly, when, as in a transmittive liquid crystal display device,it is necessary that the pixel electrodes 7 be transparent electrodesand the signal lines 6 be metal lines having higher conductivity thanthe transparent electrodes, these members may be formed on differentrespective layers.

The following will show that in the active matrix substrate according tothe present embodiment, structured as above, signal line capacitancevalue has been greatly reduced in comparison with a conventional activematrix substrate. The following will consider an electrostaticcapacitance value between the signal line 6 on the one hand and thescanning line 2 and auxiliary capacitance line 3 on the other, whichaccounts for most of the signal line capacitance value.

As a typical example, the following will consider a case in which theoxidation films 2 a and 3 a have a thickness of 0.15 μm and a relativedielectric constant of 24, the gate insulating film 4 a thickness of0.35 μm and a relative dielectric constant of 6.9, the protective film 8a thickness of 0.5 μm and a relative dielectric constant of 6.9, and theinter-layer insulating film a thickness of 3 μm and a relativedielectric constant of 3. Further, these values are equivalent in theconventional active matrix substrate (see FIGS. 6-8) and that of thepresent embodiment.

In the conventional active matrix substrate, the signal line 56 and thescanning line 52 or auxiliary capacitance line 53 were separated only bythe gate insulating film 54 and the oxidation layers 52 a and 53 a (seeFIGS. 7 and 8), but in the present embodiment, the signal line 6 and thescanning line 2 or the auxiliary capacitance line 3 are separated by thegate insulating film 4, the oxidation layers 2 a and 3 a, the protectivelayer 8, and the inter-layer insulating film 9.

Calculation of the electrostatic capacitance value for 1μm² of overlapwith the signal line 6 yielded a result of 0.16 fF/μm² for theconventional active matrix substrate, and 0.0078 fF/ μm² for the presentembodiment. In the present embodiment, providing the signal line 6 onthe inter-layer insulating film 9 increases an interval d between thesignal line 6 and the scanning line 2 or the auxiliary capacitance line3 to approximately 4 μm. As a result, the value of electrostaticcapacitance parasitic on the signal line 6 is greatly reduced, to{fraction (1/20)} of that in the conventional art.

Incidentally, the active matrix substrate according to the presentembodiment can be used, for example, in active-matrix-type displaydevices (such as a liquid crystal display device) and flat-panel imagesensors (such as a flat-panel X-ray image sensor). However, as explainedin the foregoing discussion of the background art, when using the activematrix substrate in a flat-panel image sensor, there are cases in whichthe auxiliary capacitance value must be set higher than it is in anactive-matrix-type display device.

In such a case, based on the active matrix substrate shown in FIG. 1,the layout of the auxiliary capacitance may be freely modified, to thatof the auxiliary capacitance 32 shown in FIGS. 9 through 11. Here, FIG.9 is a plan view of an active matrix substrate according to amodification of the present embodiment, and FIGS. 10 and 11 arecross-sectional views taken at lines F—F and G—G, respectively, of FIG.9. Members in FIGS. 9 through 11 having the same functions as thoseshown in FIGS. 1 through 3 will be given the same reference symbols, andexplanation thereof will be omitted here. Further, the structure shownin FIG. 10 is the same as that shown in FIG. 2 discussed above.

In this active matrix substrate, as shown in FIGS. 9 through 11, anauxiliary capacitance line 23 and a drain line 33 a, which make up theauxiliary capacitance 32, are laid out so as to occupy most of thesurface area in the pixel. These members make up the auxiliarycapacitance 32.

The active matrix substrate shown in FIG. 1 was provided with anauxiliary capacitance line 3 having a uniform width. In the activematrix substrate shown in FIG. 9, in contrast, the auxiliary capacitanceline 23 is formed so that its width is narrow beneath the signal line 6(the same width as in FIG. 1, for example), and wider beneath the pixelelectrode 7. Further, the drain line 33 a is also extended along withthe auxiliary capacitance line 23, and has a surface area close to thatof the auxiliary capacitance line 23.

By increasing the surface area of the auxiliary capacitance line 23 andthe drain line 33 a, the capacitance value of the auxiliary capacitance32 can be increased. When further increase of the capacitance value ofthe auxiliary capacitance is needed, the oxidation film 3 a and the gateinsulating film 4 between the auxiliary capacitance line 23 and thedrain line 33 a may be reduced in thickness, within a range in whichswitching characteristics of the TFT 10 can be secured.

In the present embodiment, regardless of how much the gate insulatingfilm 4 and the oxidation films 2 a and 3 a are reduced in thickness, theinterval d will never be less than 3.5 μm, which is the total thicknessof the inter-layer insulating film 9 and the protective layer 8.Accordingly, a capacitance value arising in a portion of the signal line6 overlapping with the scanning line 2 or the auxiliary capacitance line23 is barely increased, and in any case will never be more than 0.0083fF/μm².

In this way, in the active matrix substrate according to the presentembodiment, the signal line capacitance value is greatly reduced, andeven if the gate insulating film 4 and the oxidation films 2 a and 3 aare reduced in thickness, the accompanying increase in signal linecapacitance value is very small.

The active matrix substrate according to the present embodiment (FIGS. 1through 3) is provided with an auxiliary capacitance line 3 for formingthe auxiliary capacitance 12 with the drain line 13 a. However, in thepresent embodiment, the auxiliary capacitance line 3 is not necessarilyrequired; it is also possible to form the auxiliary capacitance 12 usingthe scanning line 2 of the adjacent pixel.

Such a structure not provided with an auxiliary capacitance line 3 iscommonly known as a Cs-on-gate structure. The following will explain,with reference to FIGS. 2, 4, and 5, a modification of the presentembodiment having a Cs-on-gate structure. In FIGS. 4 and 5, membershaving the same functions as those shown in FIGS. 1 and 3 will be giventhe same reference symbols, and explanation thereof will be omittedhere. Further, since the cross-section taken at line A—A of FIG. 4 isequivalent to that shown in FIG. 2, explanation thereof will also beomitted here.

FIG. 4 is a plan view of an active matrix substrate according to thismodification of the present embodiment. Here, the differences with theactive matrix substrate shown in FIG. 1 are that no auxiliarycapacitance line 3 is provided, and that the drain line 13 a extends toa position above the adjacent scanning line 2 b, so that the drain line13 a and the adjacent scanning line 2 b, separated by the gateinsulating film 4, etc., overlap in part.

FIG. 5 is a cross-sectional view taken at line C—C of FIG. 4. Here, thedifference with FIG. 3 is that the auxiliary capacitance line 3 of FIG.1 is replaced in FIG. 5 by the adjacent scanning line 2 b. Accordingly,the auxiliary capacitance 12 is formed where the drain line 13 a and theadjacent scanning line 2 b are opposite one another.

In this case as well, the capacitance value of the signal linecapacitance arising between the signal line 6 and the scanning line 2can be greatly reduced. Further, since the auxiliary capacitance line 3is not provided, no electrostatic capacitance arises between the signalline 6 and an auxiliary capacitance line 3 provided independently of thescanning line 2.

The present modification is structurally simpler than the otherstructures described in the present embodiment. However, especially whenan extremely large auxiliary capacitance is required, as in an imagesensor, using the adjacent scanning line 2 b for the auxiliarycapacitance 12 tends to increase the time constant of the scanning line2, aggravating the problem of delay in signals transmitted by thescanning line; and tends to increase a noise component applied to thepixel during rise or decay in potential of the adjacent scanning line 2b, which may adversely affect the S/N ratio.

When, on the other hand, the auxiliary capacitance line 3 is providedseparately from the scanning line 2, application of a DC signal to theauxiliary capacitance line 3 is sufficient, and thus there is no problemwith signal delay, nor with noise influencing the pixel.

Further, in the conventional structure, in which the signal line crossedthe scanning line and the auxiliary capacitance line with only a thingate insulating film therebetween, the signal line crossed two lines(scanning line and auxiliary capacitance line) for each pixel, leadingto the drawback of increase of the signal line capacitance value.However, since the structure of the present embodiment does not giverise to this unwanted effect, the advantages of the present embodimentare particularly great when the scanning line 2 and the auxiliarycapacitance line 3 are provided separately.

Further, with the active matrix substrate according to the presentembodiment, by providing the pixel electrode 7 with a structure forgenerating electrons and holes from incident electromagnetic waves suchas X-rays or visible light (photoelectric conversion layer), andproviding a counter electrode above that and applying a voltage betweenthese two members, a charge generated in the photoelectric conversionlayer by incident electromagnetic waves such as X-rays or visible lightcan be collected in the pixel electrode 7. Here, the photoelectricconversion layer is made of a-Se, CdTe, or PbI₂, for example.

Here, the pixel electrode 7 functions as a charge-collecting electrode,and a flat-panel image sensor is formed. In this case, since smallquantities of charge generated by weak electromagnetic radiation areread out, noise attributable to the signal line capacitance must bereduced as much as possible, and thus the present embodiment isparticularly effective. A flat-panel image sensor will be furtherdiscussed later.

As discussed above, an active matrix substrate according to the presentembodiment, as shown in FIGS. 1 through 5 and 9 through 11, includesscanning lines 2 provided on a glass substrate 1; TFTs 10 provided onthe glass substrate 1, each having a gate electrode 5 connected to oneof the scanning lines 2; pixel electrodes 7, each connected to a drainelectrode 13 of one of the TFTs 10; and signal lines 6, each connectedto a source electrode 11 of one of the TFTs 10; in which the signallines 6 and the pixel electrodes 7 are made from the same layer, and aninsulating layer (protective film 8, inter-layer insulating film 9,etc.) is provided between the layer forming the signal lines 6 and pixelelectrodes 7 and a layer forming the drain and source electrodes 13 and11.

In the foregoing structure, an insulating layer separates the signallines 6 (which are formed from the same layer as that of the pixelelectrodes 7) from the layer forming the source and drain electrodes 11and 13 of the TFTs 10 (which are formed on the glass substrate 1).Accordingly, the scanning lines 2 provided on the glass substrate 1 areseparated from the signal lines 6 by at least the insulating layer. Bymeans of this structure, the insulating layer can reduce the capacitancevalue of the signal line capacitance formed between the signal lines 6and the scanning lines 2.

Accordingly, it is possible to prevent increase of the time constant ofthe signal lines 6, scanning lines 2, etc. due to the signal linecapacitance, and to increase the speed at which signals are transmittedby the signal lines 6, scanning lines 2, etc. Further, noiseattributable to the signal line capacitance can also be reduced.

Since the source and drain electrodes 11 and 13 (i.e., the TFT 10) arealso separated from the signal lines by the insulating layer, the sourceand drain electrodes 11 and 13 can be kept in close contact with theswitching element main body (the semiconductor domain 14) even if thethickness of the insulating layer is increased to reduce the signal linecapacitance.

Accordingly, contact between the source and drain electrodes 11 and 13on the one hand and the semiconductor domain 14 on the other will notbecome unstable. In addition, since this allows the thickness of theinsulating layer to be increased, the signal line capacitance can befurther reduced.

As a result, an active matrix substrate can be provided for use in animage display device or image capture device which is reliable andcapable of displaying or capturing images of high quality.

Further, the foregoing active matrix substrate is preferably providedwith auxiliary capacitances 12 or 32 (hereinafter written “auxiliarycapacitances 12/32”; other members will also be referred to usingsimilar notation) formed between the insulating layer and the glasssubstrate 1, each connected to one of the pixel electrodes 7 in series,and auxiliary capacitance lines 3/23, each forming one electrode of anauxiliary capacitance 12/32.

With this structure, the auxiliary capacitance lines 3/23, like thescanning lines 2, are separated from the signal lines 6 by at least theinsulating layer. Consequently, the insulating layer can reduce thecapacitance value of the signal line capacitance formed between thesignal lines 6 and the auxiliary capacitance lines 3/23. Accordingly,signal line capacitance attributable both to the scanning lines 2 and tothe auxiliary capacitance lines 3/23 can be reduced, thus greatlyreducing the capacitance value of the signal line capacitance.

An active matrix substrate according to the present embodiment may bemade up of pixel electrodes 7 arranged in matrix form on a glasssubstrate 1; TFTs 10, each provided with a drain electrode 13 connectedto one of the pixel electrodes 7, and provided with a gate electrode 5and a source electrode 11; scanning lines 2, each connected to one ofthe gate electrodes 5; and signal lines, each connected to one of thesource electrodes 11; in which the scanning lines 2 and the signal lines6 are arranged in lattice form on the glass substrate 1, extending inintersecting directions; and the glass substrate 1 is provided with aninsulating layer (protective film 8, inter-layer insulating film 9,etc.) covering the scanning lines 2 and the TFTs 10; and the pixelelectrodes 7 and the signal lines 6 are provided on the insulatinglayer.

With this structure, since at least the insulating layer is providedbetween the scanning lines 2 and the signal lines 6, the insulatinglayer can reduce the capacitance value of the signal line capacitanceformed where a scanning line 2 lies opposite a signal line 6.

In other words, in this structure, the insulating layer is providedbetween the scanning lines 2 and the TFTs 10 on the one hand and thesignal lines 6 on the other. Accordingly, the capacitance value of thesignal line capacitance formed with the scanning lines 2 can be reducedwhile still maintaining close contact between the semiconductor domain14 and the electrodes of the TFT 10. As a result, an active matrixsubstrate can be provided which is highly reliable and capable ofdisplay or capture of high-quality images.

Further, since the pixel electrode 7 is provided on top of theinsulating film, the pixel electrode 7 can be provided so as to beexposed. Accordingly, when a liquid crystal display device or an imagesensor is formed using the present active matrix substrate, the pixelelectrode 7 and the liquid crystal layer or photoelectric conversionlayer can be provided in close proximity, thus smoothing (expediting)transmission of a potential or a charge between the pixel electrode 7and the layer in question.

Further, since an interval between the source and drain electrodes 11and 13 and the gate electrode 5 in the TFT 10 is not particularlyrelated to the insulating layer, functioning of the TFT 10 is notaffected by changing the thickness of the insulating layer. Accordingly,the thickness of the insulating layer can be increased sufficiently toprovide a sufficient reduction in the signal line capacitance value.

Further, in the foregoing active matrix substrate, the signal lines 6and the pixel electrodes 7 are preferably made from the same layer.

With this structure, the signal lines 6 and the pixel electrodes 7 canbe formed by patterning of a single layer, and thus, by merely modifyinga patterning mask conventionally used in forming the pixel electrodes,the present active matrix substrate can be manufactured withoutincreasing the number of manufacturing steps. Accordingly, cost increasedue to structural modification can be held to a minimum.

Further, the foregoing active matrix substrate preferably also includesdrain lines 13 a/33 a extending from the drain electrodes 13/33; andauxiliary capacitance lines 3/23 made from the same layer as that of thescanning lines 2 and overlapping in part with the drain lines 13 a/33 a;in which a gate insulating film 4 is provided between the auxiliarycapacitance lines 3/23 and the drain lines 13 a/33 a.

With this structure, providing the gate insulating film 4 between theauxiliary capacitance lines 3/23 and the drain lines 13 a/33 a can formthe auxiliary capacitance 12/32. Here, the auxiliary capacitance lines3/23 are made from the same layer as that of the scanning lines 2 (someof the scanning lines 2, i.e. the adjacent scanning lines 2 b, may serveas the auxiliary capacitance lines 3/23), and since the drain lines 13a/33 a are formed by extension of the drain electrodes 13, the thicknessof the gate insulating film 4 may b e se t independently of theinsulating layer.

Accordingly, the auxiliary capacitance value can be increased whilereducing the signal line capacitance value. Consequently, fluctuationsin potential of the pixel electrode 7 can be suppressed, thus enablingstable display or capture of images. Further, since the auxiliarycapacitance value can be increased by making the gate insulating film 4thinner, the width of the auxiliary capacitance lines 3/23 can bedecreased, thereby increasing the aperture ratio in a transmittivedisplay device. In other words, it is possible to secure both auxiliarycapacitance value and aperture ratio simultaneously.

As a result, it is possible to provide a highly reliable active matrixsubstrate having high image quality.

An active matrix substrate according to the present embodiment mayinclude signal lines 6 and scanning lines 2 which are both connected toTFTs 10, in which the signal lines 6 and the scanning lines 2 areseparated by a resin material.

With this structure, the capacitance value of electrostatic capacitancearising between the signal lines 6 and scanning lines 2 can be reduced,thus reducing the signal line capacitance value.

Incidentally, in an active matrix substrate provided with the auxiliarycapacitances 12/32, the resin material is also preferably providedbetween the auxiliary capacitance lines 3/23, which form the auxiliarycapacitances 12/32, and the signal lines 6. With this structure, thesignal line capacitance can be further reduced.

A method of manufacturing an active matrix substrate according to thepresent embodiment includes the steps of forming the scanning lines 2and the auxiliary capacitance lines 3/23 by patterning of a single film;forming the source and drain electrodes 11 and 13 by patterning of asingle film; and forming the pixel electrodes 7 and the signal lines 6by patterning of a single film.

In this method, the scanning lines 2 and auxiliary capacitance lines3/23; the source and drain electrodes 11 and 13; and the signal lines 6and pixel electrodes 7 are respectively formed by patterning of singlefilms. Accordingly, an active matrix substrate can be manufacturedwithout increasing the complexity or number of steps of a conventionalmethod of manufacturing an active matrix substrate having an inter-layerinsulating film.

As discussed above, an active matrix substrate according to the presentembodiment includes a layer (first electrode layer) forming the scanninglines 2 (the gate electrodes 5), a layer (second electrode layer)forming the source electrodes 11, and a layer forming the signal lines6, provided in that order on the glass substrate 1; and is provided withan insulating layer (protective film 8, inter-layer insulating film 9,etc.) between the layer forming the source electrodes 11 and the layerforming the signal lines 6: Further, the scanning lines 2 (first lines)and the signal lines 6 (second lines) are provided on opposite sides ofthe insulating layer.

In addition, it is preferable if gate electrodes 5 are formed on thelayer forming the scanning lines 2, if drain electrodes 13 are made fromthe same layer as that of the source electrodes 11, and if asemiconductor domain 14 of the TFT 10 is provided between the gateelectrodes 5 on the one hand and the source and drain electrodes 11 and13 on the other, in contact with the source and drain electrodes 11 and13.

In contrast to the conventional structure in which an insulating layerwas provided between the gate electrode on the one hand and the sourceand drain electrodes on the other, the foregoing structure ensurescontact between the semiconductor domain 14 and the source and drainelectrodes 11 and 13, thus forming a highly reliable TFT 10.

Further, it is preferable if a first insulating film (gate insulatingfilm 4, oxidation film 2 a, etc.) is provided between the semiconductordomain 14 and the layer forming the scanning lines 2 and the gateelectrodes 5, and if the scanning lines 2 and the signal lines 6 arealso separated by the first insulating film.

With this structure, the first insulating film can further reduce thecapacitance value of the signal line capacitance arising between thesignal lines 6 and the scanning lines 2.

Further, it is preferable if an auxiliary capacitance 12/32 connected tothe drain electrode 13 is formed between the insulating layer and theglass substrate 1, and if an auxiliary capacitance line 3/23, whichforms one of the electrodes of the auxiliary capacitance 12/32, isseparated from the signal lines 6 by the insulating layer.

In this structure, the auxiliary capacitance 12/32 is provided betweenthe insulating layer and the glass substrate 1, and the auxiliarycapacitance line 3/23 (which, along with the drain electrode 13, formsthe auxiliary capacitance 12/32) is separated from the signal lines 6 bythe insulating layer.

In a conventional active matrix substrate, signal lines and auxiliarycapacitance lines were separated by a gate insulating film provided onthe auxiliary capacitance lines.

In the present structure, in contrast, the signal lines 6 are separatedfrom both the scanning lines 2 and the auxiliary capacitance lines 3/23by the. insulating layer. Accordingly, the foregoing capacitance valuereducing effect applies to signal line capacitance attributable to boththe scanning lines 2 and the auxiliary capacitance lines 3/23. As aresult, it is possible to greatly reduce the signal line capacitancevalue.

Incidentally, the auxiliary capacitance lines 3/23 are preferably madeof the same layer as that of the scanning lines 2. In this case, bymerely modifying the pattern used for patterning of the scanning lines2, the auxiliary capacitance lines 3/23 can also be formed.

Further, it is also preferable if a second insulating film (gateinsulating film 4, oxidation film 3 a, etc.) is provided between thelayer forming the drain electrodes 13 and the layer forming theauxiliary capacitance lines 3/23, and if the second insulating film alsoseparates the auxiliary capacitance lines 3/23 and the signal lines 6.

With this structure, the second insulating film can reduce thecapacitance value of the signal line capacitance arising between thesignal lines 6 and the auxiliary capacitance lines 3/23.

In addition, the pixel electrodes 7 connected to the drain electrodes 13are preferably made of the same layer as that of the layer forming thesignal lines 6.

With this structure, since the signal lines 6 and the pixel electrodes 7are made from the same layer, great increase of the number ofmanufacturing steps can be avoided, even in the foregoing structure inwhich the signal lines 6 and the source electrodes 11 are formed ondifferent layers.

In other words, the signal lines 6 and the pixel electrodes 7 can beformed in a s ingle process by patterning of a single conductive filmmade of a single material. Accordingly, the present active matrixsubstrate can be manufactured by merely modifying part of the pattern ofa patterning mask used in forming the pixel electrodes in a method ofmanufacturing a conventional active matrix substrate.

A s a result, the foregoing active matrix substrate can be manufacturedwith fewer manufacturing steps, thus contributing to improvement inyield and reduction of costs.

Further, the foregoing insulating layer preferably includes aninter-layer insulating film 9 made of a resin material.

With this structure, the signal lines 6 are separated from the scanninglines 2 or the auxiliary capacitance lines 3/23 by the inter-layerinsulating film 9 made of a resin material. A comparatively thick filmof resin material, around 1 μm to 5 μm in thickness, can be easilyformed by spin coating. Further, since resin generally has a smallerrelative dielectric constant than inorganic materials, the inter-layerinsulating film 9 can be formed of a material with a small relativedielectric constant.

Accordingly, by using an inter-layer insulating film 9 made of resin inthe insulating layer, it is possible to form an insulating layer havinga smaller capacitance value than an insulating layer made only ofinorganic materials. As a result, the signal line capacitance value canbe greatly reduced.

Further, by using a film formation method such as spin coating,unevenness in surface height where the TFTs 10, signal lines 6, etc. canbe smoothed out. As a result, when manufacturing a flat-panel imagesensor by forming a photoelectric conversion layer of e.g. a-Se on theactive matrix substrate, smoothing of the surface of the active matrixsubstrate can prevent crystallization of the a-Se, thus avoidingimpairment of the performance of the photoelectric conversion layer.

In addition, the insulating layer preferably also includes theprotective film 8.

In this structure, in addition to the inter-layer insulating film 9, theinsulating layer also includes the protective film 8 for protecting theTFTs 10. A protective film 8 for protecting the TFTs 10 can be formed ofa stable organic material, for example. By this means, the TFTs 10 canbe protected with more certainty, thereby avoiding damage thereto.

Moreover, since the protective film 8 is formed as (part of) theinsulating layer, the signal lines 6 are also separated from thescanning lines 2 and the auxiliary capacitance lines 3/23 by theprotective layer 8 as well as the gate insulating film 4, theinter-layer insulating film 9, etc. Accordingly, the signal linecapacitance value can be further reduced.

Further, the inter-layer insulating film 9 is preferably made of a resinmaterial having photosensitivity. With this structure, the inter-layerinsulating film 9 can be easily patterned by steps such as exposure anddeveloping.

Further, the inter-layer insulating film 9 is preferably made of anacrylic resin. Acrylic resin has a relative dielectric constant ofapproximately 3, which is lower than that of other resins likepolyimide, and thus an inter-layer insulating film 9 with a smallelectrostatic capacitance value can be formed. Accordingly, the signalline capacitance value can be greatly reduced.

In structures where the pixel electrode 7 overlaps with the signal line6 or the scanning line 2, in particular, the capacitance value of anelectrostatic capacitance arising between the pixel electrode 7 and thesignal line 6 or scanning line 2 can be greatly reduced by means of theinter-layer insulating film 9.

An active matrix substrate according to the present embodiment includessignal lines 6 and scanning lines 2 connected to TFTs 10, in which thesignal lines 6 and the scanning lines 2 are separated by a resinmaterial.

With this structure, the scanning lines 6 and the signal lines 2 areprovided on opposite sides of the resin material from each other,extending, for example, in intersecting directions. Since, as discussedabove, resin materials have a low relative dielectric constant, thecapacitance value of an electrostatic capacitance arising between thesignal lines 6 and the scanning lines 2 can be reduced. As a result, thesignal line capacitance value can be reduced.

Second Embodiment

The following second embodiment will explain, with reference to FIGS. 12through 14, another active matrix substrate according to the presentinvention, resulting from application of the structure of the activematrix substrate explained in the first embodiment above. Members havingthe same functions as those shown in the drawings pertaining to thefirst embodiment above will be given the same reference symbols, andexplanation thereof will be omitted here.

FIG. 12 is a plan view of an active matrix substrate according to thepresent embodiment, and FIGS. 13 and 14 are cross-sectional views takenat lines H—H and I—I, respectively, of FIG. 12.

The structure of the active matrix substrate according to the presentembodiment is for the most part equivalent to that explained in thefirst embodiment above with reference to FIG. 9, except for the additionof a second protective film 8 a (signal line protective film). In FIG.12, the second protective layer 8 a is shown by a thick two-dot-and-dashline.

The second protective film 8 a is provided chiefly so as to cover thesignal line 6 which is exposed above the inter-layer insulating film 9.Here, the second protective film 8 a is provided so as to cover allareas excluding the pixel electrode 7 (although it overlaps somewhatwith the edge of the pixel electrode 7). The second protective film 8 acan be made of any insulative material; here, the second protective film8 a is made of resin.

In order to form the second protective film 8 a, it is sufficient to addthe following step to the manufacturing process explained in the firstembodiment above. Namely, in the foregoing manufacturing process, afterforming the signal lines 6 and the pixel electrodes 7, an insulative,photosensitive resin is coated onto the active matrix substrate. Then,by exposure and developing, the resin is patterned into a predeterminedshape. Here, the shape of patterning is one which, as mentioned above,covers the signal lines 6 but exposes the pixel electrodes 7.

Here, it is preferable to form the second protective film 8 a of thesame material as the inter-layer insulating film 9, with a thickness of1 μm to 3 μm.

Incidentally, the second protective film 8 a is not limited to theforegoing; it is sufficient if it is an insulative protective film whichcovers the signal line 6. For example, the second protective film 8 amay be an oxidation layer obtained by anodic oxidation of the signalline 6 itself.

An active matrix substrate according to the present embodiment,provided, as explained above, with an insulative second protective film8 a covering the signal lines 6, has the following features in additionto the effects explained in the first embodiment above.

Since the signal lines 6 are covered by the insulative second protectivefilm 8 a, the present active matrix substrate is advantageous when usedin a flat-panel image sensor having a photoelectric conversion layer(sensor material) provided directly on the active matrix substrate.Specifically, by using the present active matrix substrate, the secondprotective film 8 a prevents electrical contact between the signal lines6 and the photoelectric conversion layer, and thus the charges generatedin the photoelectric conversion layer by absorption of visible light,X-rays, etc. can be prevented from being superimposed on the signallines 6.

Further, since the second protective film 8 a covers the signal lines 6,the signal lines 6 are not exposed, thus preventing corrosion thereof.

Incidentally, the active matrix substrate according to the presentembodiment, like that of the first embodiment above, may have theso-called Cs-on-gate structure, in which the auxiliary capacitance 12 isformed using the adjacent scanning line 2 b (see FIGS. 4 and 5).Further, the present active matrix substrate is widely applicable inactive matrix display devices such as a liquid crystal display device,and in flat-panel image sensors such as a flat-panel X-ray image sensor.

As discussed above, an active matrix substrate according to the presentembodiment preferably includes a signal line protective film 8 acovering the signal lines 6.

With this structure, the signal lines 6 provided on the inter-layerinsulating film 9 are covered by the signal line protective film 8 a.Accordingly, the signal line protective film 8 a prevents exposure ofthe signal lines 6, thereby preventing corrosion thereof.

Moreover, when manufacturing a flat-panel image sensor having aphotoelectric conversion layer (sensor material) provided directly onthe active matrix substrate, the signal line protective film 8 aprevents electrical contact between the signal lines 6 and thephotoelectric conversion layer. Consequently, the charges generated inthe photoelectric conversion layer by absorption of visible light,X-rays, etc. can be prevented from being superimposed on the signallines 6 as noise.

As a result, it is possible to provide an active matrix substrate havinghighly reliable signal lines 6, in which noise is unlikely to besuperimposed on the signal lines 6.

Further, uneven surface height due to provision of the signal lines 6 onthe insulating layer can be smoothed by the signal line protective film8 a. Accordingly, the incidence of surface unevenness in the activematrix substrate can be reduced.

As a result, when manufacturing a flat-panel image sensor by providing aphotoelectric conversion layer of a-Se, etc. on the active matrixsubstrate, crystallization of the a-Se due to surface unevenness can beprevented, thus avoiding impairment of the performance of thephotoelectric conversion layer.

Third Embodiment

The following third embodiment will explain, with reference to FIGS. 15through 17, another active matrix substrate according to the presentinvention, structured differently from the active matrix substrateexplained in the first embodiment above. Members having the samefunctions as those shown in the drawings pertaining to the first andsecond embodiments above will be given the same reference symbols, andexplanation thereof will be omitted here.

FIG. 15 is a plan view of an active matrix substrate according to thepresent embodiment, and FIGS. 16 and 17 are cross-sectional views takenat lines J—J and K—K, respectively, of FIG. 15.

The present active matrix substrate is structured as the active matrixsubstrate discussed in the first embodiment above with reference to FIG.9, except for the position of the signal lines.

Specifically, in the active matrix substrate of the first embodimentabove (see FIGS. 9-11), signal lines 6 were provided on the uppersurface of the inter-layer insulating film 9, but in the active matrixsubstrate according to the present embodiment, signal lines 26 areprovided between the protective film 8 and the inter-layer insulatingfilm 9. Accordingly, the signal lines 26 are connected to the sourcelines 11 a via contact holes 26 a formed in the protective layer 8.

The present active matrix substrate can be manufactured by modifyingpart of the active matrix substrate manufacturing method explained inthe first embodiment, as follows.

In a method of manufacturing the active matrix substrate according tothe present embodiment, manufacturing steps up to forming the protectivelayer 8 and forming therein the contact holes 26 a (6 a in the firstembodiment) and the contact holes 7 a are performed in the same manneras in the active matrix substrate manufacturing method of the firstembodiment.

Next, before forming the inter-layer insulating film 9 on the protectivefilm 8, the signal lines 26 are formed. As in the first embodimentabove, the signal lines 26 may be formed by depositing a film of ITO,tantalum, or aluminum, etc. by sputtering and by patterning the film ina predetermined shape.

Then, on the active matrix substrate provided with the protective film 8and the signal lines 26, the inter-layer insulating film 9 and the pixelelectrodes 7 are formed in the same manner as in the first embodiment,thus completing the active matrix substrate. Naturally, the signal lines26 do not require formation of the contact holes 6 a (see FIG. 10) inthe inter-layer insulating film 9.

The active matrix substrate according to the present embodiment,structured as described above, has the effect of reducing electrostaticcapacitance value, like those of the first and second embodiments above.The following will show that in the present active matrix substrate, thesignal line capacitance value is reduced in comparison with aconventional active matrix substrate. The following will consider anelectrostatic capacitance value between the signal line 26 on the onehand and the scanning line 2 and auxiliary capacitance line 23 on theother, which accounts for most of the signal line capacitance value.

In a typical example, the oxidation films 2 a and 3 a have a thicknessof 0.15 μm and a relative dielectric constant of 24, the gate insulatingfilm 4 a thickness of 0.35 μm and a relative dielectric constant of 6.9,and the protective film 8 a thickness of 0.5 μm and a relativedielectric constant of 6.9, and these values are equivalent in theconventional active matrix substrate (see FIGS. 6-8) and that accordingto the present embodiment.

In the conventional active matrix substrate, the signal line 56 and thescanning line 52 or auxiliary capacitance line 53 were separated only bythe gate insulating film 54 and the oxidation layers 52 a or 53 a (seeFIGS. 7 and 8), but in the present embodiment, the signal line 26 andthe scanning line 2 or the auxiliary capacitance line 23 are separatedby the gate insulating film 4, the oxidation layers 2 a or 3 a, and theprotective layer 8.

Calculation of the electrostatic capacitance value for 1 μm² of overlapwith the signal line 26 yielded a result of 0.16 fF/μm² for theconventional active matrix substrate, and 0.068 fF/μm² for the presentembodiment. In the present embodiment, providing the signal line 26 onthe protective film 8 increases an interval d between the signal line 26and the scanning line 2 or the auxiliary capacitance line 23 toapproximately 1 μm. As a result, the value of electrostatic capacitanceparasitic on the signal line 26 is reduced to {fraction (1/2.4)} of thatin the conventional art.

This rate of reduction is less than the reduction rate of approximately{fraction (1/20)} obtained in the active matrix substrate according tothe first embodiment above. However, it is still effective in reducingnoise generated in the signal line 26 due to the small signal linecapacitance value in the conventional active matrix substrate.

In addition to the foregoing effect of reducing electrostaticcapacitance value, the present active matrix substrate also has thestructural advantage of a low incidence of difference (unevenness) insurface height (surface unevenness) of the active matrix substrate, or alow value of surface height difference. The following will explain thisin concrete terms.

In the active matrix substrate explained in the first embodiment above(see e.g. FIGS. 10 and 11), the signal lines 6 and the pixel electrodes7 were exposed on the inter-layer insulating film 9.

Since, as discussed above, the inter-layer insulating film 9 is formedby, for example, a coating of photosensitive resin, all unevennessesbeneath the inter-layer insulating film 9 are eliminated or lessened bythe inter-layer insulating film 9. Accordingly, surface unevenness ofthe active matrix substrate are an unevenness corresponding to the filmthickness of the signal lines 6 and the pixel electrodes 7 (filmthickness difference), and the depth of the contact holes 6 a and 7 a.

Since the signal lines 6, the pixel electrodes 7, and the contact holes6 a and 7 a are provided in each pixel, the foregoing surfaceunevennesses are present in each pixel of the active matrix substrateaccording to the first embodiment above. Consequently, in the activematrix substrate of the first embodiment, incidence of surfaceunevenness, i.e. the number of differences in surface height occurringper unit surface area, is comparatively high.

In contrast, in the active matrix substrate explained in the secondembodiment above (see FIGS. 13 and 14), the signal lines 6 and contactholes 6 a are covered by the second protective film 8 a. Accordingly,surface unevenness of the active matrix substrate are only the filmthickness difference of the second protective film 8 a, and the depth ofthe contact hole 7 a. For that reason, the rate of incidence of surfaceunevenness is reduced in comparison with the first embodiment.

However, as discussed above, the second protective film 8 a is formedby, for example, a coating of photosensitive resin, and thus the filmthickness unevenness of the second protective film 8 a may be on themicrometer order.

In contrast, in the active matrix substrate according to the presentembodiment (see FIGS. 16 and 17), the signal lines 26 are providedbeneath the inter-layer insulating film 9, and only the pixel electrodes7 are exposed on the inter-layer insulating film 9. Accordingly, thesurface unevenness of the present active matrix substrate are only thefilm thickness difference of the pixel electrode 7, and the depth of thecontact hole 7 a. For this reason, in the active matrix substrate of thepresent embodiment, the rate of incidence of surface unevenness isreduced in comparison with that of the first embodiment.

Furthermore, since the pixel electrodes 7 are formed of a thin film ofITO or metal (with a thickness of 0.1 μm-0.3 μm, for example), the filmthickness difference of the pixel electrodes 7 is much smaller than thatof the second protective layer 8 a of the second embodiment. For thatreason, in the active matrix substrate of the present embodiment, thesurface unevenness value can be reduced in comparison with that of thesecond embodiment.

When using an active matrix substrate in a flat-panel image sensor,particularly one which uses a typical photoelectric conversion layer ofa-Se, it is necessary to make surface unevennesses of the active matrixsubstrate as small and as few as possible, i.e., to reduce as much aspossible the value and rate of incidence of surface unevenness (see FIG.20, to be discussed below).

This is because when, for example, a film of a-Se is formed directly onthe active matrix substrate, surface unevennesses thereof becomesingularities which trigger crystallization of the a-Se. If the a-Secrystallizes, dark current of the photoelectric conversion layer isincreased, and photoelectric conversion characteristics are markedlyimpaired.

Accordingly, the active matrix substrate of the present embodiment,having small surface irregularities and a small rate of incidencethereof, is suited to a flat-panel image sensor. Further, by using thepresent active matrix substrate in a flat-panel image sensor, it ispossible to suppress crystallization of the photoelectric conversionlayer made of e.g. a-Se, and thus to prevent impairment of photoelectricconversion characteristics.

Incidentally, the active matrix substrate according to the presentembodiment, like that of the first embodiment above, may have theso-called Cs-on-gate structure, in which the auxiliary capacitance 12 isformed using the adjacent scanning line 2 b (see FIGS. 4 and 5).Further, the present active matrix substrate is widely applicable inactive matrix display devices such as a liquid crystal display device,and in flat-panel image sensors such as a flat-panel X-ray image sensor.

Further, since the signal lines 26 and the pixel electrodes 7 areseparated by the inter-layer insulating film 9, it is also possible tostructure the present active matrix such that the pixel electrodes 7overlap with the signal lines 26. With this structure, the surface areaof the pixel electrodes 7 can be increased, thus improving aperturerate.

As discussed above, in the active matrix substrate according to thepresent embodiment, it is preferable if the foregoing insulating layeris made of the protective layer 8 for protecting the TFTs 10, and if thesignal lines 26 and protective layer 8 are covered by the inter-layerinsulating film 9.

In this structure, the signal lines 26 are separated from the scanninglines 2 and the auxiliary capacitance lines 23 by the protective film 8as insulating layer.

In this case, the protective film 8 serves to protect the TFT 10, but isindependent therefrom, and thus can be increased in thickness withouthindering functioning of the TFT 10. Further, by increasing thethickness of the protective film 8, the signal line capacitance valuecan be reduced.

Further, with this structure, the protective film 8 (insulating layer)and the signal lines 26 provided on the protective film 8 are covered bythe inter-layer insulating film 9. Consequently, differences in heightbetween the protective film 8 and the signal lines 26, and surfaceunevenness due to the TFTs 10, can be smoothed by the inter-layerinsulating film 9. As a result, when manufacturing a flat-panel imagesensor by providing a photoelectric conversion layer of e.g. a-Se on thepresent active matrix substrate, the a-Se can be prevented fromcrystallizing due to surface unevenness attributable to the signal lines26, TFTs 10, etc., thus preventing impairment of performance of thephotoelectric conversion layer.

Further, the pixel electrodes 7 connected to the drain electrodes 13 arepreferably provided on the inter-layer insulating film 9.

In this structure, the signal lines 26 and the pixel electrodes 7 areseparated by the inter-layer insulating film 9. Accordingly, the pixelelectrodes 7 can be structured so as to overlap with the signal lines26, thus increasing the surface area of the pixel electrodes 7 andimproving aperture ratio.

Moreover, the capacitance value of electrostatic capacitance arisingbetween the signal line 26 and the pixel electrode 7 can be reduced bythe inter-layer insulating film 9, thus making it possible to furtherreduce the signal line capacitance value.

Further, the inter-layer insulating film 9 is preferably made of a resinmaterial. A comparatively thick film of resin material, around 1 μm to 5μm in thickness, can be easily formed by spin coating.

Accordingly, surface unevenness arising where the TFTs 10, signal lines26, etc. are provided can be smoothed. As a result, when manufacturing aflat-panel image sensor by providing a photoelectric conversion layer ofe.g. a-Se on the present active matrix substrate, crystallization of thea-Se can be prevented, thus preventing impairment of performance of thephotoelectric conversion layer.

Moreover, since resin generally has a smaller relative dielectricconstant than inorganic materials, the inter-layer insulating film 9 canbe formed of a material with a small relative dielectric constant.

Accordingly, in a structure in which the pixel electrodes 7 overlap withthe signal lines 26, by using an inter-layer insulating film 9 having asmall relative dielectric constant, it is possible to greatly reduce thecapacitance value of an electrostatic capacitance arising between thesignal lines 26 and the pixel electrodes 7.

Fourth Embodiment

The following fourth embodiment will explain, with reference to FIG. 18,a flat-panel image sensor which uses the active matrix substrateexplained in the first embodiment above. Members having the samefunctions as those shown in the drawings pertaining to the firstembodiment above will be given the same reference symbols, andexplanation thereof will be omitted here.

As shown in FIG. 18, the flat-panel image sensor according to thepresent embodiment is a flat-panel X-ray image sensor made up of anactive matrix substrate 100, equivalent to that explained in the firstembodiment above with reference to FIGS. 9 through 11, and a sensorsubstrate 112, with a conductive connector material 108 providedtherebetween. Since the active matrix substrate 100 provided in thepresent flat-panel X-ray image sensor is equivalent to the active matrixsubstrate explained in the first embodiment above with reference toFIGS. 9 through 11, explanation thereof will be omitted here. FIG. 18 isa cross-sectional view of part of the present flat-panel X-ray imagesensor corresponding to line G—G of FIG. 9.

First the sensor substrate 112 will be explained. The sensor substrate112 includes a glass substrate 106, provided with, on a side thereoffacing the active matrix substrate 110 (the opposite side from thatreceiving incident X-rays), a sensor bias electrode 104, a photoelectricconversion layer 102 (sensor film; sensor layer; sensor material), and acharge-collecting electrode 110, in that order.

The photoelectric conversion layer 102 generates positive and negativecharges upon reception of X-rays, and is made of CdTe in the presentembodiment.

The sensor bias electrode 104 and the charge-collecting electrode 110are made of films of ITO or metal, and are provided on opposite sides ofthe photoelectric conversion layer 102 from each other. Further, a highvoltage can be applied between the sensor bias electrode 104 and thecharge-collecting electrode 110.

Here, when X-rays are incident on the photoelectric conversion layer102, positive and negative charges are generated therein in accordancewith the strength of the incident X-rays. At this time, if a highvoltage is applied between the sensor bias electrode 104 and thecharge-collecting electrode 110, the electric field generated therebycauses the positive and negative charges to move to the sensor biaselectrode 104 or the charge-collecting electrode 110.

For example, FIG. 18 shows a case in which a high voltage is applied sothat the charge-collecting electrode 110 is positive with respect to thesensor bias electrode 104. In this case, positive charges move towardthe sensor bias electrode 104, and negative charges toward thecharge-collecting electrode 110.

Charges which move to and are collected by the charge-collectingelectrode 110 in this way are then read out by pixel as image signals bythe active matrix substrate 100, thus obtaining a two-dimensional imageof the X-rays incident on the flat-panel X-ray image sensor.

Here, in order to read out the charges collected in thecharge-collecting electrode 110 by pixel, a charge-collecting electrode110 is provided independently for each pixel. In this way, crosstalk ofsignals from adjacent pixels can be avoided. The sensor bias electrode104 and the photoelectric conversion layer 102, however, can be providedacross substantially the entire surface of the glass substrate 106.

The following will explain connection of the foregoing sensor substrate112 with the active matrix substrate 100. As explained above, the activematrix substrate 100 reads out the charges collected in thecharge-collecting electrodes 110 of the sensor substrate 112 as imagesignals through the TFTs 10 (see FIG. 9) provided in each pixel.Accordingly, a conductive connector material 108 is provided in eachpixel for connecting the charge-collecting electrode 110 of the sensorsubstrate 112 to the pixel electrode 7 of the active matrix substrate110.

The conductive connector material 108 may be a photosensitive resinwhich has been given conductivity, solder or a conductive adhesive whichcan be patterned, etc. By using one of these materials, it is possibleto form a conductive connector material 108 patterned independently foreach pixel electrode 7.

Here, a flat-panel X-ray image sensor with approximately 2800×2800pixels and a pixel pitch of 0.15 mm was prepared with the foregoingstructure, and an X-ray image was captured. As a result, it was foundthat the signal line capacitance reduction effect of the active matrixsubstrate 100 made it possible to obtain an image signal with anexceptionally good S/N ratio. Capture of moving images was also found tobe possible.

The foregoing structure is one which enables manufacture of theflat-panel X-ray image sensor by first forming the active matrixsubstrate 100 and the sensor substrate 112 separately, and thenconnecting the active matrix substrate 100 and the sensor substrate 112together. For this reason, the film formation temperature of thephotoelectric conversion layer 102 during forming of the sensorsubstrate 112 is not limited by the thermal resistance temperature ofthe active matrix substrate 100. Accordingly, in addition to theforegoing CdTe, it is possible to select from among a variety ofmaterials such as CdZnTe for the photoelectric conversion layer 102.

Further, in the flat-panel X-ray image sensor structured as above, thephotoelectric conversion layer 102 is not provided directly on theactive matrix substrate. Accordingly, even when using an active matrixsubstrate with a comparatively high incidence of surface unevenness,unsatisfactory film formation due to surface unevenness of the activematrix substrate can be prevented, thus suppressing impairment of thecharacteristics of the photoelectric conversion layer 102.

Incidentally, the foregoing explained an X-ray image sensor, in whichthe photoelectric conversion layer 102 generates charges upon receivingX-rays, but there is no limitation to this. By changing the materialforming the photoelectric conversion layer 102, it is possible tostructure an image sensor which obtains images of electromagnetic wavesof another wavelength domain.

As discussed above, in the flat-panel image sensor according to thepresent embodiment, the photoelectric conversion layer 102 and the pixelelectrodes 7 are preferably connected by a conductive connector material108 patterned to correspond to the pixel electrodes 7.

A flat-panel image sensor with this structure can be manufactured byfirst separately forming the active matrix substrate 100 and thesubstrate including the photoelectric conversion layer 102, and thenelectrically connecting the two substrates together. For this reason,the film formation temperature of the photoelectric conversion layer 102during forming of the sensor substrate 112 is not limited by the thermalresistance temperature of the active matrix substrate 100. Accordingly,the material for the photoelectric conversion layer 102 can be selectedfrom among a variety of materials, including materials withcomparatively high film formation temperatures, such as CdTe and CdZnTe.

Further, the foregoing flat-panel X-ray image sensor can be structuredsuch that the photoelectric conversion layer 102 is not provideddirectly on the active matrix substrate 100. Accordingly, even whenusing an active matrix substrate with a comparatively high incidence ofsurface unevenness, unsatisfactory film formation due to surfaceunevenness of the active matrix substrate 100 can be prevented, thussuppressing impairment of the characteristics of the photoelectricconversion layer 102.

Fifth Embodiment

The following fifth embodiment will explain, with reference to FIG. 19,a flat-panel image sensor which uses the active matrix substrateexplained in the second embodiment above. Members having the samefunctions as those shown in the drawings pertaining to the secondembodiment above will be given the same reference symbols, andexplanation thereof will be omitted here.

As shown in FIG. 19, the flat-panel image sensor according to thepresent embodiment is a flat-panel X-ray image sensor made up of anactive matrix substrate 200, equivalent to that explained in the secondembodiment above with reference to FIGS. 12 through 14, a photoelectricconversion layer 202, and a sensor bias electrode 204. Since the activematrix substrate 200 provided in the present flat-panel X-ray imagesensor is equivalent to the active matrix substrate explained in thesecond embodiment above with reference to FIGS. 12 through 14,explanation thereof will be omitted here. FIG. 19 is a cross-sectionalview of part of the present flat-panel X-ray image sensor correspondingto line I—I of FIG. 12.

In the present flat-panel X-ray image sensor, the photoelectricconversion layer 202 (sensor film; sensor layer) is provided oversubstantially the entire surface of the active matrix substrate 200.Further, the sensor bias electrode 204 is provided over substantiallythe entire surface of the photoelectric conversion layer 202.

Here, the photoelectric conversion layer 202 is made of a material suchas a-Se, and the sensor bias electrode 204 of a metal film of e.g. Au(gold).

The present flat-panel X-ray image sensor, like the flat-panel X-rayimage sensor of the fourth embodiment above, reads out as image signalscharges generated in the photoelectric conversion layer 202 by X-raysincident thereon.

The present flat-panel X-ray image sensor differs from that of thefourth embodiment above in that the photoelectric conversion layer 202is provided directly on the active matrix substrate 200. For thisreason, manufacturing of the flat-panel X-ray image sensor issimplified, and the manufacturing process can be streamlined.

Further, a high voltage is applied between the sensor bias electrode 204and the pixel electrode 7. By applying this high voltage, charges movingtoward the active matrix substrate 200 are collected directly by thepixel electrode 7 (charge-collecting electrode) of the active matrixsubstrate 200, and read out through the TFT 10 (see FIG. 12).

For example, FIG. 19 shows a case in which a high voltage is appliedsuch that the pixel electrode 7 is negative with respect to the sensorbias electrode 204. In this case, negative charges move toward thesensor bias electrode 204, and positive charges toward the pixelelectrode 7.

The present flat-panel X-ray image sensor is structured such that thephotoelectric conversion layer 202 made of e.g. a-Se is formed directlyon the active matrix substrate 200. However, since the active matrixsubstrate 200 has a reduced incidence of surface unevenness because ofthe second protective film 8 a, e.g. a-Se of the photoelectricconversion layer 202 can be prevented from crystallizing. Consequently,with the present flat-panel X-ray image sensor, it is possible tosuppress increase of dark current in the photoelectric conversion layer202.

Here, a flat-panel X-ray image sensor with approximately 2800×2800pixels and a pixel pitch of 0.15 mm was prepared with the foregoingstructure, and an X-ray image was captured. As a result, it was foundthat the effects of the active matrix substrate 200 in reducing signalline capacitance and suppressing increase of dark current made itpossible to obtain an image signal with an exceptionally good S/N ratio.Capture of moving images was also found to be possible.

As discussed above, in the flat-panel image sensor according to thepresent embodiment, the photoelectric conversion layer 202 is providedon the pixel electrode 7, and the pixel electrode 7 functions as acharge-collecting electrode.

With this structure, a flat-panel image sensor with a small signal linecapacitance value can be obtained, thus making it possible to suppressincrease of the time required for readout of charges caused by signalline capacitance, and to reduce noise applied to the signal of thesignal line 6 due to the influence of the scanning lines 2 (see FIG. 12)and the auxiliary capacitance lines 23. As a result, it is possible toprovide an image sensor which is able to obtain accurate image data evenwith images in very weak electromagnetic waves, as for example inmedical X-ray imaging.

Furthermore, the present flat-panel X-ray image sensor is structured ofthe active matrix substrate 200, in which the second protective film 8 areduces the rate of incidence of surface unevenness, and the resultingsmoothness can suppress crystallization of the photoelectric conversionlayer 202 of e.g. a-Se. This in turn prevents impairment of theperformance of the photoelectric conversion layer 202.

Sixth Embodiment

The following sixth embodiment will explain, with reference to FIG. 20,a flat-panel image sensor which uses the active matrix substrateexplained in the third embodiment above. Members having the samefunctions as those shown in the drawings pertaining to the thirdembodiment above will be given the same reference symbols, andexplanation thereof will be omitted here.

As shown in FIG. 20, the flat-panel image sensor according to thepresent embodiment is a flat-panel X-ray image sensor made up of anactive matrix substrate 300, equivalent to that explained in the thirdembodiment above with reference to FIGS. 15 through 17, a photoelectricconversion layer 302, and a sensor bias electrode 304. Since the activematrix substrate 300 provided in the present flat-panel X-ray imagesensor is equivalent to the active matrix substrate explained in thethird embodiment above with reference to FIGS. 15 through 17,explanation thereof will be omitted here. FIG. 20 is a cross-sectionalview of part of the present flat-panel X-ray image sensor correspondingto line K—K of FIG. 15.

In the present flat-panel X-ray image sensor, the photoelectricconversion layer 302 (sensor film; sensor layer) is provided oversubstantially the entire surface of the active matrix substrate 300.Further, the sensor bias electrode 304 is provided over substantiallythe entire surface of the photoelectric conversion layer 302.

Here, the photoelectric conversion layer 302 is made of a material suchas a-Se, and the sensor bias electrode 304 of a metal film of e.g. Au(gold).

The structure and functions of the present flat-panel X-ray image sensorare substantially the same as those of the flat-panel X-ray image sensorof the fifth embodiment above. The present flat-panel X-ray image sensordiffers from that of the fifth embodiment above in that, in the activematrix substrate 300, the signal lines 26 are provided beneath theinter-layer insulating film 9, and only the pixel electrodes 7 areexposed on the inter-layer insulating film 9. Accordingly, as discussedabove, in addition to the rate of incidence of surface unevenness, thevalue of the difference in height of the surface unevenness can also bereduced in comparison with the fifth embodiment. Consequently,crystallization of the e.g. a-Se of the photoelectric conversion layer302 can be further suppressed, and it is possible to reduce dark currentin the photoelectric conversion layer 302.

Here, a flat-panel X-ray image sensor with approximately 2800×2800pixels and a pixel pitch of 0.15 mm was prepared with the foregoingstructure, and an X-ray image was captured. As a result, it was foundthat the effects of the active matrix substrate 300 in reducing signalline capacitance and suppressing increase of dark current made itpossible to obtain an image signal with an exceptionally good S/N ratio.Capture of moving images was also found to be possible. In addition, itwas found that the incidence of faults due to crystallization of thephotoelectric conversion layer 302 was exceptionally low.

As discussed above, the present flat-panel X-ray image sensor isstructured of the active matrix substrate 300, in which the inter-layerinsulating film 9 reduces the rate of incidence of surface unevennessand/or provides a smoother surface, and this smoothness can suppresscrystallization of the photoelectric conversion layer 302 of e.g. a-Se.This in turn prevents impairment of the performance of the photoelectricconversion layer 302.

Seventh Embodiment

Each of the active matrix substrates described in the first throughthird embodiments above used TFTs 10 (see FIGS. 2 and 3) of thebottom-gate type (inverse staggered structure). However, the presentinvention is not limited to this, and is of course also applicable toTFTs 80 (switching elements) of the top-gate type (staggered structure).

Accordingly, the following seventh embodiment will explain, withreference to FIGS. 21 through 24, an active matrix substrate which usesa top-gate TFT 80. Members having the same functions as those shown inthe drawings pertaining to the first through third embodiments abovewill be given the same reference symbols, and explanation thereof willbe omitted here.

FIG. 21 is a plan view of the active matrix substrate according to thepresent embodiment, and FIGS. 22, 23 and 24 are cross-sectional viewstaken at lines L—L, M—M and N—N, respectively, of FIG. 21.

The basic difference of the present active matrix substrate from that ofthe first embodiment above is that the TFTs 80 have a top-gatestructure, and that consequently the vertical positions of the scanninglines 72 and signal lines 76 relative to the glass substrate 1 areinverted. This active matrix substrate is structured as follows.

A plurality of scanning lines 72 and signal lines 76 are arranged in alattice form on a glass substrate 1, and a TFT 80 and a pixel electrode7 are provided for each area where a scanning line 72 and a signal line76 cross.

Here, the structures of the top-gate TFT 80 and the bottom-gate TFT 10(see FIGS. 2 and 3) are vertically inverted with respect to the glasssubstrate 1. In other words, in the TFT 80, the glass substrate 1 isfirst provided with a source electrode 81 and a drain electrode 83.Then, on top of the source and drain electrodes 81 and 83 are provided acontact layer (not shown), a semiconductor domain 84 (semiconductorlayer), a gate insulating film 74 (insulating film), and a gateelectrode 75, in that order.

Next an inter-layer insulating film 9 (insulating layer) is provided soas to cover the TFT 80, the gate insulating film 74, etc. Theinter-layer insulating film 9 can be made of a film of a photosensitiveresin material such as acrylic or an inorganic material such as SiN_(x),or of a laminated film of two or more such materials.

The gate electrode 75 is connected to a scanning line 72 which isprovided on the inter-layer insulating film 9 via a contact hole 72 a.The source electrode 81 is connected to a signal line 76 formed on thesame layer therewith. Further, the drain electrode 83 is connected to apixel electrode 7 formed on the inter-layer insulating film 9 via acontact hole 83 b formed in the gate insulating film 74, a drain line 83a provided between the gate insulating film 74 and the inter-layerinsulating film 9, and a contact hole 7 a formed in the inter-layerinsulating film 9.

Further, below the contact hole 7 a and between the glass substrate 1and the gate insulating film 74 is provided an auxiliary capacitanceline 73, which forms an auxiliary capacitance 82 (see FIG. 24) with thedrain line 83 a.

In the foregoing structure, the glass substrate i is provided with alayer which forms the signal lines 76; a layer provided above the layerforming the signal lines 76, which forms the gate electrodes 75; and alayer provided above the layer forming the gate electrodes 75, whichforms the scanning lines 72. Further, the gate insulating film 74 isprovided between the layer forming the signal lines 76 and the layerforming the gate electrodes 75, and the inter-layer insulating film 9 isprovided between the layer forming the gate electrodes 75 and the layerforming the scanning lines 72.

Furthermore, in the foregoing structure, it is possible to form thesignal lines 76, the source and drain electrodes 81 and 83, and theauxiliary capacitance lines 73 from the same layer. In the same way, itis possible to form the gate electrodes 75 and the drain lines 83 a fromthe same layer, and to form the pixel electrodes 7 and the scanninglines 72 from the same layer.

Incidentally, the materials for the foregoing structural elements arethe same as those in the first embodiment, etc., and the manufacturingmethod of the first embodiment can be applied to the present embodimentby changing the order of manufacturing steps as necessary, andaccordingly explanation thereof will be omitted here.

In conventional active matrix substrates, including those provided withtop-gate TFTS, the scanning lines and signal lines were separatedchiefly by the gate insulating film alone. With such a structure, thethickness of the gate insulating film was determined in accordance withthe specifications of the TFT, and since the electrostatic capacitancevalue of the gate insulating film is based on the thickness of thisfilm, it was difficult to set a smaller value. For this reason, in areaswhere a signal line and a scanning line are opposite one another onopposite sides of the gate insulating film, the capacitance value of asignal line capacitance arising between the signal line and the scanningline is increased.

In the foregoing structure, however, the scanning lines 72 and thesignal lines 76 are separated by the inter-layer insulating film 9,which is provided between the layer forming the gate electrodes 75 andthe layer forming the scanning lines 72. Consequently, the intervalbetween the signal lines 76 and the scanning lines 72 separated by theinter-layer insulating film 9 can be set to a greater value than thethickness of the gate insulating film 74. Thus the capacitance value ofthe signal line capacitance arising between the signal lines 76 and thescanning lines 72 can be reduced in comparison with the foregoingconventional structure.

Since the inter-layer insulating film 9 is provided between the layerforming the gate electrodes 75 and the layer forming the signal lines76, it is independent of the specifications of the TFTs 80, unlike thegate insulating film 74. Accordingly, the inter-layer insulating film 9can be formed in such a way that the signal line capacitance value issufficiently reduced.

Incidentally, the active matrix substrate according to the presentembodiment may be structured so as to further include a protective film(second protective film; scanning line protective film) corresponding tothe signal line protective film 8 a, which protects the scanning line 72exposed on the extreme surface of the active matrix substrate (see FIGS.13 and 14).

In addition, the active matrix substrate according to the presentembodiment can be used in a flat-panel image sensor substantiallyequivalent to the flat-panel image sensors explained in the fourth andfifth embodiments with reference to FIGS. 18 and 19, respectively.Further, a flat-panel image sensor incorporating the active matrixsubstrate according to the present embodiment can obtain effectssubstantially equivalent to those of the flat-panel image sensors of thefourth and fifth embodiments above.

As discussed above, in the active matrix substrate according to thepresent embodiment, the glass substrate 1 is provided with a layer(first electrode layer) which forms the signal lines 76 (the sourceelectrodes 81), a layer (and second electrode layer) which forms thegate electrodes 75, and a layer which forms the scanning lines 72, inthat order; in which an insulating layer (inter-layer insulating film 9)is provided between the layer forming the gate electrodes 75 and thelayer forming the scanning lines 72. The signal line 76 (first lines)and the scanning lines 72 (second lines) are separated by the insulatinglayer.

In this structure, the signal lines 76 and the scanning lines 72 areprovided on opposite sides of the insulating layer from each other,extending, for example, in intersecting directions. Consequently, theinsulating layer can reduce the capacitance value of the signal linecapacitance. Accordingly, the signal line capacitance value can besufficiently reduced.

As a result, with this structure, it is possible to provide an activematrix substrate in which functions of the TFTs 80 are good, and thesignal line capacitance arising between the signal lines 76 and thescanning lines 72 has a small capacitance value.

Further, the pixel electrodes 7 connected to the drain electrodes 83 arepreferably made from the same layer as that of the scanning lines 72.

In this structure, the pixel electrodes 7 connected to the drainelectrodes 83 are made from the same layer as that of the scanning lines72. Accordingly, even in the foregoing structure, in which the scanninglines 72 and the gate electrodes 75 are formed on different layers,great increase of the number of manufacturing steps can be avoidedbecause the scanning lines 72 and the pixel electrodes 7 are made fromthe same layer.

As a result, the foregoing active matrix substrate can be manufactureswith fewer manufacturing steps, thus contributing to improvement ofyield and reduction of costs.

Eighth Embodiment

The following eighth embodiment will explain, with reference to FIGS. 25through 28, a structure in which the active matrix substrate of theseventh embodiment above is further provided with a protective film 78(insulating layer). Members having the same functions as those shown inthe drawings pertaining to the first through seventh embodiments abovewill be given the same reference symbols, and explanation thereof willbe omitted here.

FIG. 25 is a plan view of an active matrix substrate according to thepresent embodiment, and FIGS. 26, 27, and 28 are cross-sectional viewstaken at lines O—O, P—P, and Q—Q, respectively, of FIG. 25.

The active matrix substrate according to the present embodiment isstructured as that of the seventh embodiment above, except that theinsulating layer between the layer forming the gate electrode 75 and thedrain line 83 a on one hand and the layer forming the pixel electrode 7on the other hand is made up of two layers: a protective film 78 (seeFIGS. 26-28) and the inter-layer insulating film 9. Further, thescanning lines 72 are provided between the protective film 78 and theinter-layer insulating film 9.

In addition to the effect of reducing electrostatic capacitance value,the present active matrix substrate, like that of the third embodimentabove, has the structural advantage of small incidence of heightdifference (unevenness) in the surface of the active matrix substrate(surface unevenness), or a small height difference value.

Accordingly, the structure of the present active matrix substrate issuited to a flat-panel image sensor. Further, by using the presentactive matrix substrate in a flat-panel image sensor, crystallization ofthe photoelectric conversion layer of e.g. a-Se can be suppressed,thereby preventing impairment of the characteristics of thephotoelectric conversion layer.

In the active matrix substrate according to the present embodiment, likethat of the third embodiment above, the scanning lines 72 and the pixelelectrodes 7 are separated by the inter-layer insulating film 9, andaccordingly the pixel electrodes 7 may be allowed to overlap with thescanning lines 72. In this way, the surface area of each pixel electrode7 can be increased, thus increasing the aperture ratio.

Incidentally, the active matrix substrate according to the presentembodiment can be used in a flat-panel image sensor substantiallyequivalent to the flat-panel image sensor explained in the sixthembodiment with reference to FIG. 20. Further, a flat-panel image sensorincorporating the active matrix substrate according to the presentembodiment can obtain effects substantially equivalent to those of theflat-panel image sensor of the sixth embodiment above.

As discussed above, in the active matrix substrate according to thepresent embodiment, it is preferable if the insulating layer is made ofthe protective film 78 which protects the TFT 80, and if the inter-layerinsulating film 9 is provided so as to cover the scanning lines 72 andthe protective film 78.

With this structure, the scanning lines 72 and the signal lines 76 areseparated by the protective film 78 as insulating layer. In this case,the thickness of the protective film 78 can be increased, and the signalline capacitance value reduced, without impairing the functions of theTFT 80.

Further, with the foregoing structure, a height difference between theprotective film 78 and the scanning lines 72 provided thereon, andheight differences due to the TFT 80 can be evened and smoothed by theinter-layer insulating film 9. As a result, when manufacturing aflat-panel image sensor by providing a photoelectric conversion layermade of e.g. a-Se on the present active matrix substrate, the a-Se canbe prevented from crystallizing due to surface unevenness attributableto the scanning lines 72, the TFT 80, etc., thus preventing impairmentof the performance of the photoelectric conversion layer.

Further, the pixel electrodes 7 connected to the drain electrodes 83 arepreferably provided on the inter-layer insulating film 9.

In this structure, the scanning lines 72 and the pixel electrodes 7 areseparated by the inter-layer insulating film 9. Accordingly, the pixelelectrodes 7 may overlap with the scanning lines 72, and thus theaperture ratio can be increased by increasing the surface area of eachpixel electrode 7.

The embodiments and concrete examples of implementation discussed in theforegoing detailed explanation serve solely to illustrate the technicaldetails of the present invention, which should not be narrowlyinterpreted within the limits of such. embodiments and concreteexamples, but rather may be applied in many variations, provided suchvariations do not depart from the spirit of the present invention orexceed the scope of the patent claims set forth below.

What is claimed is:
 1. An active matrix substrate comprising: asubstrate; a switching element including a gate electrode, a sourceelectrode, and a drain electrode, and switching between the source anddrain electrodes based on a signal supplied to the gate electrode; ascanning line connected to the gate electrode; a signal line connectedto the source electrode; and a pixel electrode connected to the drainelectrode; said substrate being provided with a layer which forms saidscanning line; a layer, provided above said layer forming the scanningline, which forms the source electrode; a layer, provided above saidlayer forming the source electrode, which forms said signal line; and aninsulating layer, provided between said layer forming the sourceelectrode and said layer forming the signal line; and said scanning lineand said signal line being separated from each other by said insulatinglayer.
 2. The active matrix substrate set forth in claim 1, wherein:said layer forming the scanning line also forms the gate electrode; thedrain electrode is made from said layer forming the source electrode;and said switching element includes a semiconductor layer providedbetween the gate electrode on the one hand and the source and drainelectrodes on the other hand, in contact with the source and drainelectrodes.
 3. The active matrix substrate set forth in claim 2, furthercomprising a source line formed by a part of said layer forming thesource electrodes which extends outside a domain on the semiconductorlayer; and a contact hole formed in said insulating layer in a positionon the semiconductor layer; wherein said signal line is connected tosaid source line via said contact hole.
 4. The active matrix substrateset forth in claim 2, further comprising a first insulating film,provided between the semiconductor layer and said layer forming thescanning line and the gate electrode; wherein said scanning line andsaid signal line are also separated from each other by said firstinsulating film.
 5. The active matrix substrate set forth in claim 2,further comprising: an auxiliary capacitance formed between saidinsulating layer and said substrate by two electrodes, which isconnected to the drain electrode; and an auxiliary capacitance lineforming one of the electrodes of said auxiliary capacitance, separatedfrom said signal line by said insulating layer.
 6. The active matrixsubstrate set forth in claim 5, wherein said auxiliary capacitance lineis made from said layer forming the scanning line.
 7. The active matrixsubstrate set forth in claim 5, wherein: said auxiliary capacitance lineis provided extending in a direction intersecting with a direction inwhich said signal line extends; and said auxiliary capacitance line hasa width which is relatively smaller in an area where said auxiliarycapacitance line crosses under said signal line, and relatively greaterelsewhere.
 8. The active matrix substrate set forth in claim 5, whereinthe other electrode of said auxiliary capacitance is formed by anextension of said layer forming the drain electrode.
 9. The activematrix substrate set forth in claim 5, further comprising a secondinsulating film, provided between said layer forming the drain electrodeand a layer forming the auxiliary capacitance line; wherein saidauxiliary capacitance line and said signal line are also separated fromeach other by said second insulating film.
 10. The active matrixsubstrate set forth in claim 4, further comprising a drain line formedby an extension of said layer forming the drain electrode; wherein saiddrain line is provided above an adjacent scanning line adjacent to saidscanning line; and said drain line is separated from said adjacentscanning line by said first insulating film.
 11. The active matrixsubstrate set forth in claim 1, wherein said pixel electrode connectedto the drain electrode is made from said layer forming the signal line.12. The active matrix substrate set forth in claim 11, wherein saidpixel electrode is connected to the drain electrode via a contact holeformed in said insulating layer.
 13. The active matrix substrate setforth in claim 1, further comprising a signal line protective filmcovering said signal line.
 14. The active matrix substrate set forth inclaim 1, wherein said insulating layer includes an inter-layerinsulating film made of a resin material.
 15. The active matrixsubstrate set forth in claim 14, wherein said insulating layer furtherincludes a protective film which protects said switching element. 16.The active matrix substrate set forth in claim 14, wherein saidinter-layer insulating film is made of a resin material havingphotosensitivity.
 17. The active matrix substrate set forth in claim 14,wherein said inter-layer insulating film is made of acrylic resin. 18.The active matrix substrate set forth in claim 1, wherein: saidinsulating layer is made from a protective film which protects saidswitching element; and the active matrix substrate further comprises aninter-layer insulating film which covers said signal line and saidprotective film.
 19. The active matrix substrate set forth in claim 18,wherein said pixel electrode connected to the drain electrode isprovided on said inter-layer insulating film.
 20. The active matrixsubstrate set forth in claim 18, wherein said inter-layer insulatingfilm is made of a resin material.
 21. The active matrix substrate setforth in claim 13, wherein said signal line protective film is made ofacrylic resin.
 22. The active matrix substrate set forth in claim 13,wherein said signal line protective film has a thickness of 1 μm through3 μm.
 23. The active matrix substrate set forth in claim 13, whereinsaid signal line protective film is an oxidation film of said signalline.
 24. The active matrix substrate set forth in claim 19, whereinsaid pixel electrode is provided so as to overlap with said signal line,but is separated therefrom by said inter-layer insulating film.